Vishay SIRS5700DP-T1-RE3
Vishay SIRS5700DP-T1-RE3

Vishay SIRS5700DP-T1-RE3

Brand

Vishay Semiconductors

Mfr. Part #

SIRS5700DP-T1-RE3

Description

MOSFETs N-CH 150V Vds 20Vgs 144A Rds .0062

Datasheet

SIRS5700DP-T1-RE3

Status

In stock

Specifications

50
Attributes Value Search
Category MOSFETs
Brand Vishay Semiconductors
RoHS
Technology Si
Mounting Style SMD/SMT
Package / Case SO-8
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 150 V
Id - Continuous Drain Current 144 A
Rds On - Drain-Source Resistance 5.6 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 4 V
Qg - Gate Charge 73 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Pd - Power Dissipation  278 W
Channel Mode Enhancement
Packaging Reel, Cut Tape, MouseReel
Brand Vishay
Configuration Single
Fall Time 25 ns
Forward Transconductance - Min 122 S
Product Type MOSFETs
Rise Time 21 ns
Series SiRS5700DP
SPQ 3000
Subcategory Transistors
Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 40 ns
Typical Turn-On Delay Time 20 ns
50

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