Infineon Technologies IAUCN10S7N021ATMA1

Brand

Infineon Technologies

Mfr. Part #

IAUCN10S7N021ATMA1

Description

N-Channel 100 V 175A (Tj) 217W (Tc) Surface Mount PG-TDSON-8-53

Datasheet

IAUCN10S7N021ATMA1

Status

In stock

Specifications

50

Attributes	Value	Search
Category	MOSFETs
Brand	Infineon Technologies
RoHS
Technology	Si
Mounting Style	SMD/SMT
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	100 V
Id - Continuous Drain Current	220 A
Rds On - Drain-Source Resistance	2.1 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	3.2 V
Qg - Gate Charge	105 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C
Channel Mode	Enhancement
Tradename	OptiMOS
Packaging	Reel, Cut Tape
Brand	Infineon Technologies
Configuration	Single
Fall Time	11 ns
Product Type	MOSFETs
Rise Time	10 ns
Series	OptiMOS 7
SPQ	5000
Subcategory	Transistors
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	16 ns
Typical Turn-On Delay Time	10 ns
Part # Aliases	IAUCN10S7N021 SP005402875
50