Vishay SIHB100N65E-GE3

Brand

Vishay Semiconductors

Mfr. Part #

SIHB100N65E-GE3

Description

MOSFETs E Series Power MOSFET 650 V (D-S) 150 C MOSFET 0.1 10V

Datasheet

SIHB100N65E-GE3

Status

In stock

Specifications

50

Attributes	Value	Search
Category	MOSFETs
Brand	Vishay Semiconductors
RoHS
Technology	Si
Mounting Style	SMD/SMT
Package / Case	D2PAK-3
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	650 V
Id - Continuous Drain Current	30 A
Rds On - Drain-Source Resistance	100 mOhms
Vgs - Gate-Source Voltage	- 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage	5 V
Qg - Gate Charge	41 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	208 W
Channel Mode	Enhancement
Packaging	Tube
Brand	Vishay
Configuration	Single
Fall Time	32 ns
Forward Transconductance - Min	12 S
Product Type	MOSFETs
Rise Time	68 ns
Series	SIHB E
SPQ	1000
Subcategory	Transistors
Transistor Type	N-Channel Power MOSFET
Typical Turn-Off Delay Time	50 ns
Typical Turn-On Delay Time	28 ns
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