Onsemi NVMJST1D4N06CLTXG
Onsemi NVMJST1D4N06CLTXG

Onsemi NVMJST1D4N06CLTXG

Brand

Mfr. Part #

NVMJST1D4N06CLTXG

Description

MOSFETs TRENCH 6 60V LFPAK 5X7

Status

In stock

Specifications

50
Attributes Value Search
Category MOSFETs
Brand Onsemi
RoHS
Technology Si
Mounting Style SMD/SMT
Package / Case TCPAK57
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 198 A
Rds On - Drain-Source Resistance 1.49 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 2 V
Qg - Gate Charge 92.2 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C
Pd - Power Dissipation  113 W
Channel Mode Enhancement
Packaging Reel, Cut Tape
Brand onsemi
Configuration Single
Fall Time 11 ns
Forward Transconductance - Min 217 S
Product Type MOSFETs
Rise Time 25 ns
Series NVMJST1D4N06CL
SPQ 3000
Subcategory Transistors
Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 60 ns
Typical Turn-On Delay Time 16 ns
50

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