Infineon Technologies IPP011N03LF2SAKSA1

Brand

Infineon Technologies

Mfr. Part #

IPP011N03LF2SAKSA1

Description

MOSFETs TRENCH <= 40V

Datasheet

IPP011N03LF2SAKSA1

Status

In stock

Specifications

50

Attributes	Value	Search
Category	MOSFETs
Brand	Infineon Technologies
RoHS
Technology	Si
Mounting Style	Through Hole
Package / Case	PG-TO220-3
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	30 V
Id - Continuous Drain Current	210 A
Rds On - Drain-Source Resistance	1.05 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	2.35 V
Qg - Gate Charge	224 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C
Pd - Power Dissipation	3.8 W
Channel Mode	Enhancement
Tradename	StrongIRFET
Packaging	Tube
Brand	Infineon Technologies
Configuration	Single
Fall Time	33 ns
Forward Transconductance - Min	200 S
Product Type	MOSFETs
Rise Time	105 ns
Series	StrongIRFET2
SPQ	1000
Subcategory	Transistors
Transistor Type	1 N-Channel
Typical Turn-On Delay Time	46 ns
Part # Aliases	IPP011N03LF2S SP005749228
50

Brand	Infineon Technologies
Configuration	Single
Fall Time	33 ns
Forward Transconductance - Min	200 S
Product Type	MOSFETs
Rise Time	105 ns
Series	StrongIRFET 2
SPQ	1000
Subcategory	Transistors
Transistor Type	1 N-Channel
Typical Turn-On Delay Time	46 ns
Part # Aliases	IPP011N03LF2S SP005749228