Infineon Technologies IPTC025N15NM6ATMA1
Infineon Technologies IPTC025N15NM6ATMA1

Infineon Technologies IPTC025N15NM6ATMA1

Mfr. Part #

IPTC025N15NM6ATMA1

Description

MOSFETs TRENCH >=100V

Status

In stock

Specifications

50
Attributes Value Search
Category MOSFETs
Brand Infineon Technologies
RoHS
Technology Si
Mounting Style SMD/SMT
Package / Case HDSOP-16
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 150 V
Id - Continuous Drain Current 264 A
Rds On - Drain-Source Resistance 2.5 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 3.5 V
Qg - Gate Charge 105 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C
Pd - Power Dissipation  395 W
Channel Mode Enhancement
Packaging Reel, Cut Tape
Brand Infineon Technologies
Configuration Hexa
Fall Time 19 ns
Forward Transconductance - Min 101 S
Product Type MOSFETs
Rise Time 16 ns
SPQ 1800
Subcategory Transistors
Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 34 ns
Typical Turn-On Delay Time 21 ns
Part # Aliases IPTC025N15NM6 SP005918358
50

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