Toshiba TPN2R203NC,L1Q
Toshiba TPN2R203NC,L1Q

Toshiba TPN2R203NC,L1Q

Brand

Mfr. Part #

TPN2R203NC,L1Q

Description

MOSFETs X35PBF Power MOSFET Trans VGS10V VDS30V

Datasheet

TPN2R203NC,L1Q

Status

In stock

Specifications

57
Attributes Value Search
Category MOSFETs
Brand Toshiba
RoHS
Technology Si
Mounting Style SMD/SMT
Package / Case TSON-Advance-8
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 45 A
Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 2.3 V
Qg - Gate Charge 34 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Pd - Power Dissipation  42 W
Channel Mode Enhancement
Packaging Reel, Cut Tape, MouseReel
Brand Toshiba
Configuration Single
Height 0.85 mm
Length 3.1 mm
Product Type MOSFETs
Series TPN2R203NC
Factory Pack Quantity 5000
Subcategory Transistors
Transistor Type 1 N-Channel
Width 3.1 mm
Unit Weight 0.000705 oz
57

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