STMicroelectronics STW65N023M9-4
STMicroelectronics STW65N023M9-4

STMicroelectronics STW65N023M9-4

Mfr. Part #

STW65N023M9-4

Description

MOSFETs N-channel 650 V, 19.9 mOhm typ., 95 A MDmesh M9 Power MOSFET

Datasheet

STW65N023M9-4

Status

In stock

Specifications

50
Attributes Value Search
Category MOSFETs
Brand STMicroelectronics
RoHS
Technology Si
Mounting Style Through Hole
Package / Case TO-247-4
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 650 V
Id - Continuous Drain Current 95 A
Rds On - Drain-Source Resistance 23 mOhms
Vgs - Gate-Source Voltage - 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage 4.2 V
Qg - Gate Charge 230 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Pd - Power Dissipation  463 W
Channel Mode Enhancement
Packaging Tube
Brand STMicroelectronics
Product Type MOSFETs
Series MDmesh M9
SPQ 30
Subcategory Transistors
Transistor Type 1 N-Channel
Unit Weight 6.080 g
50

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