STMicroelectronics STP80N600K6

Brand

STMicroelectronics

Mfr. Part #

STP80N600K6

Description

MOSFETs N-channel 800 V, 515 mOhm typ., 7 A MDmesh K6 Power MOSFET

Datasheet

STP80N600K6

Status

In stock

Specifications

50

Attributes	Value	Search
Category	MOSFETs
Brand	STMicroelectronics
RoHS
Technology	Si
Mounting Style	Through Hole
Package / Case	TO-220-3
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	800 V
Id - Continuous Drain Current	0,291666667
Rds On - Drain-Source Resistance	600 mOhms
Vgs - Gate-Source Voltage	- 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage	4 V
Qg - Gate Charge	10.7 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	86 W
Channel Mode	Enhancement
Packaging	Tube
Brand	STMicroelectronics
Fall Time	12.6 ns
Product Type	MOSFETs
Rise Time	4.1 ns
SPQ	50
Subcategory	Transistors
Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	28.2 ns
Typical Turn-On Delay Time	9 ns
Unit Weight	2 g
50