ROHM Semiconductor R6020ENXC7G

Brand

ROHM Semiconductor

Mfr. Part #

R6020ENXC7G

Description

MOSFETs TO220 600V 20A N-CH MOSFET

Datasheet

R6020ENXC7G

Status

In stock

Specifications

50

Attributes	Value	Search
Category	MOSFETs
Brand	ROHM Semiconductor
RoHS
Technology	Si
Mounting Style	Through Hole
Package / Case	TO-220FM-3
Transistor Polarity	N-Channel
Number of Channels	1 Channel
Vds - Drain-Source Breakdown Voltage	600 V
Id - Continuous Drain Current	20 A
Rds On - Drain-Source Resistance	196 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	4 V
Qg - Gate Charge	60 nC
Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 155 C
Pd - Power Dissipation	68 W
Channel Mode	Enhancement
Packaging	Tube
Brand	ROHM Semiconductor
Configuration	Single
Fall Time	67 ns
Forward Transconductance - Min	5 S
Product Type	MOSFETs
Rise Time	53 ns
SPQ	1000
Subcategory	Transistors
Transistor Type	Power MOSFET
Typical Turn-Off Delay Time	150 ns
Typical Turn-On Delay Time	35 ns
Part # Aliases	R6020ENX
50