ROHM Semiconductor HP8K22TB
ROHM Semiconductor HP8K22TB

ROHM Semiconductor HP8K22TB

Mfr. Part #

HP8K22TB

Description

MOSFETs 30V Nch+Nch Si MOSFET

Datasheet

HP8K22TB

Status

In stock

Specifications

50
Attributes Value Search
Category MOSFETs
Brand ROHM Semiconductor
RoHS
Technology Si
Mounting Style SMD/SMT
Package / Case HSOP-8
Transistor Polarity N-Channel
Number of Channels 2 Channel
Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 27 A, 57 A
Rds On - Drain-Source Resistance 4.6 mOhms, 8.8 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 2.5 V
Qg - Gate Charge 10 nC, 16.8 nC
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Pd - Power Dissipation 3 W
Channel Mode Enhancement
Packaging Reel, Cut Tape, MouseReel
Brand ROHM Semiconductor
Configuration Dual
Fall Time 3.4 ns, 8.4 ns
Forward Transconductance - Min 10 S, 18 S
Product Type MOSFETs
Rise Time 4.5 ns, 7.2 ns
SPQ 2500
Subcategory Transistors
Transistor Type 2 N-Channel
Typical Turn-Off Delay Time 25.5 ns, 34.7 ns
Typical Turn-On Delay Time 9.6 ns, 13.2 ns
Part # Aliases HP8K22
Unit Weight 771.020 mg
50

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