Diodes Incorporated FMMT555TA
Diodes Incorporated FMMT555TA

Diodes Incorporated FMMT555TA

Mfr. Part #

FMMT555TA

Description

Bipolar (BJT) Transistor PNP 150 V 1 A 100MHz 500 mW Surface Mount SOT-23-3

Datasheet

FMMT555TA

Status

In stock

Specifications

55
Attributes Value Search
Category Bipolar Transistors - BJT
Brand Diodes Incorporated
RoHS
Technology Si
Mounting Style SMD/SMT
Package / Case SOT-23-3
Transistor Polarity PNP
Configuration Single
Maximum DC Collector Current 0,041666667
Collector- Emitter Voltage VCEO Max 150 V
Collector- Base Voltage VCBO 160 V
Emitter- Base Voltage VEBO 5 V
Collector-Emitter Saturation Voltage 300 mV
Pd - Power Dissipation 500 mW
Gain Bandwidth Product fT 100 MHz
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Series FMMT55
Packaging Reel, Cut Tape, MouseReel
Brand Diodes Incorporated
Continuous Collector Current - 1 A
DC Collector/Base Gain hfe Min 50 at 10 mA, 10 V, 50 at 300 mA, 10 V
DC Current Gain hFE Max 50 at 10 mA, 10 V
Height 1.1 mm
Length 3 mm
Product Type BJTs - Bipolar Transistors
SPQ 3000
Subcategory Transistors
Width 1.4 mm
Unit Weight 8 mg
55

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