Central Semiconductor 2N2222A TIN/LEAD
Central Semiconductor 2N2222A TIN/LEAD

Central Semiconductor 2N2222A TIN/LEAD

Mfr. Part #

2N2222A TIN/LEAD

Description

Bipolar Transistors - BJT 75Vcbo 40Vceo 6.0V 800mA 500mW

Datasheet

2N2222A TIN/LEAD

Status

In stock

Specifications

55
Attributes Value Search
Category Bipolar Transistors - BJT
Brand Central Semiconductor
RoHS
Technology Si
Mounting Style Through Hole
Package / Case TO-18-3
Transistor Polarity NPN
Configuration Single
Collector- Emitter Voltage VCEO Max 40 V
Collector- Base Voltage VCBO 75 V
Emitter- Base Voltage VEBO 6 V
Collector-Emitter Saturation Voltage 300 mV
Pd - Power Dissipation 500 mW
Gain Bandwidth Product fT 300 MHz
Minimum Operating Temperature - 65 C
Maximum Operating Temperature + 200 C
Series 2N2222A
Packaging Bulk
Brand Central Semiconductor
Continuous Collector Current 800 mA
DC Collector/Base Gain hfe Min 35 at 0.1 mA, 10 V
DC Current Gain hFE Max 300 at 150 mA, 10 V
Product Type BJTs - Bipolar Transistors
SPQ 2000
Subcategory Transistors
55

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