Diodes Incorporated DXT5551P5-13
Diodes Incorporated DXT5551P5-13

Diodes Incorporated DXT5551P5-13

Mfr. Part #

DXT5551P5-13

Description

Bipolar (BJT) Transistor NPN 160 V 600 mA 130MHz 2.25 W Surface Mount PowerDI™ 5

Datasheet

DXT5551P5-13

Status

In stock

Specifications

55
Attributes Value Search
Category Bipolar Transistors - BJT
Brand Diodes Incorporated
RoHS
Technology Si
Mounting Style SMD/SMT
Package / Case PowerDI-5
Transistor Polarity NPN
Configuration Single
Maximum DC Collector Current 600 mA
Collector- Emitter Voltage VCEO Max 160 V
Collector- Base Voltage VCBO 180 V
Emitter- Base Voltage VEBO 6 V
Collector-Emitter Saturation Voltage 200 mV
Pd - Power Dissipation 700 mW
Gain Bandwidth Product fT 130 MHz
Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C
Series DXT5551
Packaging Reel, Cut Tape, MouseReel
Brand Diodes Incorporated
Continuous Collector Current 600 mA
DC Collector/Base Gain hfe Min 30 at 50 mA, 5 V
Product Type BJTs - Bipolar Transistors
SPQ 5000
Subcategory Transistors
Unit Weight 96 mg
55

Famous Manufacturers

Chat Chat