SiC MOSFETs 100

Manufacturers

Mounting Style

  • D2PAK-3 (TO-263-3)

  • D2PAK-7

  • D3PAK-3

  • H-PSOF-8

  • H2PAK-7

  • HDSOP-16

  • HDSOP-22

  • HiP-247-3

  • HiP-247-4

  • HiP247-3

  • HSOF-8

  • HU3PAK-7

  • MO-229-8

  • PG-HDSOP-22-3

  • PG-LHSOF-4

  • PG-TO263-7

  • SMD/SMT

  • Through Hole

  • TO-247-3

  • TO-247-4

  • TO-263-7

  • TOLL-8

  • TOLT-16

Package / Case

  • D2PAK-3 (TO-263-3)

  • D2PAK-7

  • D3PAK-3

  • H-PSOF-8

  • H2PAK-7

  • HDSOP-16

  • HDSOP-22

  • HiP-247-3

  • HiP-247-4

  • HiP247-3

  • HSOF-8

  • HU3PAK-7

  • MO-229-8

  • PG-HDSOP-22-3

  • PG-LHSOF-4

  • PG-TO263-7

  • TO-247-3

  • TO-247-4

  • TO-263-7

  • TOLL-8

  • TOLT-16

Transistor Polarity

  • N-Channel

Number of Channels

  • 1 Channel

Vds - Drain-Source Breakdown Voltage

  • 1.2 kV

  • 1.7 kV

  • 3.3 kV

  • 400 V

  • 600 V

  • 650 V

  • 700 V

  • 750 V

  • 900 V

Id - Continuous Drain Current

  • 0,416666667

  • 100 A

  • 102 A

  • 103 A

  • 107 A

  • 111 A

  • 112 A

  • 113 A

  • 115 A

  • 116 A

  • 118 A

  • 129 A

  • 130 A

  • 131 A

  • 144 A

  • 153 A

  • 154 A

  • 158 A

  • 168 A

  • 17 A

  • 17.3 A

  • 18 A

  • 19.5 A

  • 196 A

  • 248 A

  • 26 A

  • 28 A

  • 288 A

  • 29 A

  • 30 A

  • 31 A

  • 32.8 A

  • 33 A

  • 34 A

  • 35 A

  • 36 A

  • 37 A

  • 37.4 A

  • 38 A

  • 39 A

  • 40 A

  • 41 A

  • 44 A

  • 48 A

  • 48.1 A

  • 49 A

  • 50 A

  • 51 A

  • 52 A

  • 53 A

  • 54 A

  • 55 A

  • 56 A

  • 60 A

  • 61 A

  • 62 A

  • 64 A

  • 66 A

  • 68 A

  • 69 A

  • 70 A

  • 71 A

  • 75 A

  • 79 A

  • 80 A

  • 81 A

  • 82 A

  • 90 A

  • 95 A

  • 97 A

Rds On - Drain-Source Resistance

  • 100 mOhms

  • 105 mOhms

  • 110 mOhms

  • 117 mOhms

  • 12 mOhms

  • 13.1 mOhms

  • 15 mOhms

  • 160 mOhms

  • 17 mOhms

  • 17.1 mOhms

  • 18 mOhms

  • 189 mOhms

  • 19 mOhms

  • 19.1 mOhms

  • 22 mOhms

  • 22.3 mOhms

  • 224 mOhms

  • 25 mOhms

  • 26 mOhms

  • 28 mOhms

  • 29 mOhms

  • 30 mOhms

  • 31 mOhms

  • 33 mOhms

  • 35 mOhms

  • 37 mOhms

  • 390 mOhms

  • 40 mOhms

  • 41 mOhms

  • 42 mOhms

  • 44 mOhms

  • 45 mOhms

  • 50 mOhms

  • 52 mOhms

  • 53 mOhms

  • 53.5 mOhms

  • 54 mOhms

  • 56 mOhms

  • 60 mOhms

  • 62 mOhms

  • 63 mOhms

  • 67 mOhms

  • 7 mOhms

  • 70 mOhms

  • 72 mOhms

  • 73 mOhms

  • 74 mOhms

  • 75 mOhms

  • 78 mOhms

  • 8.5 mOhms

  • 80 mOhms

  • 84 mOhms

  • 87 mOhms

Vgs - Gate-Source Voltage

  • - 10 V, + 22 V

  • - 10 V, + 25 V

  • - 4 V, + 15 V

  • - 5 V, + 20 V

  • - 7 V to + 23 V

  • - 7 V to 23 V

  • - 7 V, + 20 V

  • - 7V, + 23 V

  • - 8 V, + 19 V

  • - 8 V, + 22 V

Vgs th - Gate-Source Threshold Voltage

  • 1.8 V

  • 1.9 V

  • 2.8 V

  • 2.9 V

  • 2.97 V

  • 3 V

  • 3.6 V

  • 3.8 V

  • 4 V

  • 4.2 V

  • 4.3 V

  • 4.4 V

  • 4.5 V

  • 4.7 V

  • 5 V

  • 5.1 V

  • 5.6 V

  • 5.7 V

  • 6 V

Qg - Gate Charge

  • 105 nC

  • 106 nC

  • 108 nC

  • 11.7 nC

  • 112 nC

  • 113 nC

  • 121 nC

  • 124 nC

  • 13.4 nC

  • 137 nC

  • 14 nC

  • 148 nC

  • 150 nC

  • 151 nC

  • 157 nC

  • 162 nC

  • 169 nC

  • 179 nC

  • 188 nC

  • 19 nC

  • 196 nC

  • 200 nC

  • 203 nC

  • 207 nC

  • 21 nC

  • 215 nC

  • 22 nC

  • 220 nC

  • 232 nC

  • 293 nC

  • 30 nC

  • 31 nC

  • 32 nC

  • 33.8 nC

  • 34 nC

  • 37.8 nC

  • 370 nC

  • 39 nC

  • 41 nC

  • 42 nC

  • 42.5 nC

  • 43 nC

  • 45 nC

  • 46 nC

  • 51 nC

  • 55 nC

  • 56 nC

  • 62 nC

  • 63 nC

  • 64 nC

  • 71 nC

  • 73 nC

  • 79 nC

  • 81 nC

  • 82 nC

  • 88 nC

  • 89 nC

  • 93 nC

  • 94 nC

  • 95 nC

Minimum Operating Temperature

  • - 40 C

  • - 55 C

Maximum Operating Temperature

  • + 150 C

  • + 175 C

  • + 200 C

Pd - Power Dissipation

  • 1.249 kW

  • 107 W

  • 109 W

  • 111 W

  • 115 W

  • 119 W

  • 121 W

  • 130 W

  • 136 W

  • 143 W

  • 155 W

  • 170 W

  • 176 W

  • 178 W

  • 179 W

  • 182 W

  • 187 W

  • 200 W

  • 203 W

  • 205 W

  • 211 W

  • 218 W

  • 227 W

  • 234 W

  • 236 W

  • 237 W

  • 242 W

  • 244 W

  • 250 W

  • 254.2 W

  • 259 W

  • 263 W

  • 272 W

  • 288 W

  • 289 W

  • 291 W

  • 300 W

  • 304 W

  • 306 W

  • 312 W

  • 326 W

  • 329 W

  • 330 W

  • 341 W

  • 348 W

  • 352 W

  • 357 W

  • 360 W

  • 365 W

  • 371 W

  • 375 W

  • 381 W

  • 382 W

  • 385 W

  • 388 W

  • 390 W

  • 416 W

  • 440 W

  • 470 W

  • 477 W

  • 500 W

  • 503 W

  • 510 W

  • 517 W

  • 524 W

  • 535 W

  • 555 W

  • 556 W

  • 577 W

  • 651 W

  • 652 W

  • 681 W

  • 937 W

Channel Mode

  • Enhancement

Qualification

  • AEC-Q101

Tradename

  • CoolMOS

  • CoolSiC

  • EliteSiC

  • SiC FET

SiC MOSFETs - Results:100 / 100
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Image Product Name Price
Quantity Description Mfr Part# RoHS Mounting Style Package / Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Qualification Tradename
Image Product Name Price
Quantity Description Mfr Part# RoHS Mounting Style Package / Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Qualification Tradename
STMicroelectronics SCTH100N65G2-7AG
STMicroelectronics SCTH100N65G2-7AG
SCTH100N65G2-7AG
STMicroelectronics
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SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 20 mOhm typ 95 A SCTH100N65G2-7AG SMD/SMT H2PAK-7 N-Channel 1 Channel 1.2 kV 95 A 26 mOhms 1.9 V 162 nC - 55 C + 175 C 360 W Enhancement AEC-Q101
STMicroelectronics SCTH90N65G2V-7
STMicroelectronics SCTH90N65G2V-7
SCTH90N65G2V-7
STMicroelectronics
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SiC MOSFETs Silicon carbide Power MOSFET 650 V, 116 A, 18 mOhm (typ TJ = 25C) SCTH90N65G2V-7 SMD/SMT H2PAK-7 N-Channel 1 Channel 650 V 90 A 26 mOhms - 10 V, + 22 V 1.9 V 157 nC - 55 C + 175 C 330 W Enhancement
onsemi UF4C120053K4S
onsemi UF4C120053K4S
UF4C120053K4S
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SiC MOSFETs 1200V/53MOSICFETG4TO247-4 UF4C120053K4S Through Hole TO-247-4 N-Channel 1 Channel 650 V 34 A 67 mOhms - 10 V, + 22 V 6 V - 55 C + 175 C 263 W SiC FET
onsemi UJ4C075060K3S
onsemi UJ4C075060K3S
UJ4C075060K3S
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SiC MOSFETs 750V/60MOSICFETG4TO247-3 UJ4C075060K3S Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 28 A 74 mOhms 6 V 37.8 nC - 55 C + 175 C 155 W Enhancement AEC-Q101 SiC FET
IXYS LSIC1MO120E0080
IXYS LSIC1MO120E0080
LSIC1MO120E0080
IXYS
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SiC MOSFETs 1200V 80mOhm SiC MOSFET LSIC1MO120E0080 Through Hole TO-247-3 N-Channel 1 Channel 750 V 39 A 80 mOhms 2.8 V 95 nC - 55 C + 150 C 179 W Enhancement
Wolfspeed C3M0025065D
Wolfspeed C3M0025065D
C3M0025065D
Wolfspeed
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SiC MOSFETs 650V MOSFET 25mOHMS SiC MOSFET C3M0025065D Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 97 A 25 mOhms - 5 V, + 20 V 3.6 V 108 nC - 40 C + 175 C 326 W Enhancement
Wolfspeed C3M0045065D
Wolfspeed C3M0045065D
C3M0045065D
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SiC MOSFETs 650V MOSFET 45mOHMS SiC MOSFET C3M0045065D Through Hole TO-247-3 N-Channel 1 Channel 650 V 49 A 45 mOhms - 8 V, + 19 V 3.6 V 63 nC - 40 C + 175 C 176 W Enhancement
STMicroelectronics SCT025H120G3AG
STMicroelectronics SCT025H120G3AG
SCT025H120G3AG
STMicroelectronics
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SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 27 mOhm typ., 55 A in an H2PAK-7 package SCT025H120G3AG SMD/SMT H2PAK-7 N-Channel 1 Channel 650 V 55 A 37 mOhms - 8 V, + 19 V 3 V 73 nC - 55 C + 175 C 375 W Enhancement AEC-Q101
Infineon Technologies IMT40R015M2HXTMA1
Infineon Technologies IMT40R015M2HXTMA1
IMT40R015M2HXTMA1
Infineon Technologies
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SiC MOSFETs SIC-MOS IMT40R015M2HXTMA1 SMD/SMT HSOF-8 N-Channel 1 Channel 1.2 kV 111 A 19.1 mOhms - 10 V, + 22 V 4.5 V 62 nC - 55 C + 175 C 341 W Enhancement
onsemi UF3C065040K4S
onsemi UF3C065040K4S
UF3C065040K4S
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SiC MOSFETs 650V/40MOSICFETG3TO247-4 UF3C065040K4S Through Hole TO-247-4 N-Channel 1 Channel 400 V 54 A 52 mOhms - 10 V, + 25 V 4 V 43 nC - 55 C + 175 C 326 W Enhancement AEC-Q101 SiC FET
Wolfspeed C3M0016120D
Wolfspeed C3M0016120D
C3M0016120D
Wolfspeed
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SiC MOSFETs 1.2kV 15mOHMS G3 SiC MOSFET C3M0016120D Through Hole TO-247-3 N-Channel 1 Channel 650 V 115 A 22.3 mOhms 1.8 V 207 nC - 40 C + 175 C 556 W Enhancement
Wolfspeed C3M0060065J
Wolfspeed C3M0060065J
C3M0060065J
Wolfspeed
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SiC MOSFETs SiC, MOSFET, 60mohm, 650V, TO-263-7, Industrial C3M0060065J SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 36 A 60 mOhms - 8 V, + 19 V 3.6 V 46 nC - 40 C + 175 C 136 W Enhancement
Nexperia NSF040120L4A1Q
Nexperia NSF040120L4A1Q
NSF040120L4A1Q
Nexperia
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SiC MOSFETs 1200 V, 60 mΩ, N-channel SiC MOSFET NSF040120L4A1Q Through Hole TO-247-4 N-Channel 1 Channel 650 V 53 A 60 mOhms - 4 V, + 15 V 2.9 V 81 nC - 55 C + 175 C 234 W Enhancement
Wolfspeed E4M0013120K
Wolfspeed E4M0013120K
E4M0013120K
Wolfspeed
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SiC MOSFETs SiC, MOSFET,13mohm, 1200V, TO-247-4, Automotive, Gen4 E4M0013120K Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 153 A 17 mOhms - 10 V, + 22 V 3.8 V 293 nC - 55 C + 175 C 517 W Enhancement
Infineon Technologies IMBG120R030M1HXTMA1
Infineon Technologies IMBG120R030M1HXTMA1
IMBG120R030M1HXTMA1
Infineon Technologies
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SiC MOSFETs CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package IMBG120R030M1HXTMA1 SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 56 A 41 mOhms - 8 V, + 19 V 5.1 V 63 nC - 55 C + 175 C 300 W Enhancement CoolSiC
onsemi NTH4L020N120SC1
onsemi NTH4L020N120SC1
NTH4L020N120SC1
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SiC MOSFETs SIC MOS TO247-4L 20MOHM 1200V NTH4L020N120SC1 Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 102 A 28 mOhms - 7 V, + 20 V 4.3 V 220 nC - 55 C + 175 C 510 W Enhancement EliteSiC
onsemi NVH4L160N120SC1
onsemi NVH4L160N120SC1
NVH4L160N120SC1
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SiC MOSFETs SIC MOS TO247-4L 1200V 160MOHM AUTO PART NVH4L160N120SC1 Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 17.3 A 224 mOhms 4.3 V 34 nC - 55 C + 175 C 111 W Enhancement EliteSiC
Infineon Technologies IMBG120R140M1HXTMA1
Infineon Technologies IMBG120R140M1HXTMA1
IMBG120R140M1HXTMA1
Infineon Technologies
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SiC MOSFETs CoolSiC 1200 V SiC Trench MOSFET in TO-263-7 package IMBG120R140M1HXTMA1 SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 18 A 189 mOhms 5.1 V 13.4 nC - 55 C + 175 C 107 W Enhancement CoolSiC
onsemi NTBG045N065SC1
onsemi NTBG045N065SC1
NTBG045N065SC1
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SiC MOSFETs SIC MOS D2PAK-7L 650V NTBG045N065SC1 SMD/SMT D2PAK-7 N-Channel 1 Channel 1.2 kV 62 A 50 mOhms - 7 V, + 20 V 4.3 V 105 nC - 55 C + 175 C 121 W Enhancement EliteSiC
onsemi NTBG160N120SC1
onsemi NTBG160N120SC1
NTBG160N120SC1
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SiC MOSFETs SIC MOS D2PAK-7L 160MOHM 1200V NTBG160N120SC1 SMD/SMT D2PAK-7 N-Channel 1 Channel 650 V 19.5 A 224 mOhms - 8 V, + 22 V 4.3 V 33.8 nC - 55 C + 175 C 136 W Enhancement EliteSiC
onsemi NTH4L160N120SC1
onsemi NTH4L160N120SC1
NTH4L160N120SC1
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SiC MOSFETs SIC MOS TO247-4L 1200V 160MOHM INDUSTRY PART NTH4L160N120SC1 Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 17.3 A 224 mOhms 4.3 V 34 nC - 55 C + 175 C 111 W Enhancement EliteSiC
onsemi NTHL160N120SC1
onsemi NTHL160N120SC1
NTHL160N120SC1
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SiC MOSFETs SIC MOS TO247-3L 160MOHM 1200V NTHL160N120SC1 Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 17 A 224 mOhms 4.3 V 34 nC - 55 C + 175 C 119 W Enhancement EliteSiC
Microchip Technology MSC015SMA070S
Microchip Technology MSC015SMA070S
MSC015SMA070S
Microchip Technology
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SiC MOSFETs MOSFET SIC 700 V 15 mOhm TO-268 MSC015SMA070S SMD/SMT D3PAK-3 N-Channel 1 Channel 1.2 kV 112 A 19 mOhms 1.9 V 215 nC - 55 C + 175 C 477 W Enhancement
onsemi NTBG060N090SC1
onsemi NTBG060N090SC1
NTBG060N090SC1
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SiC MOSFETs SIC MOS 60MOHM 900V NTBG060N090SC1 SMD/SMT D2PAK-7 N-Channel 1 Channel 700 V 44 A 84 mOhms 4.3 V 88 nC - 55 C + 175 C 211 W Enhancement EliteSiC
onsemi NTH4L080N120SC1
onsemi NTH4L080N120SC1
NTH4L080N120SC1
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SiC MOSFETs SIC MOS TO247-4L 80MOHM 1200V NTH4L080N120SC1 Through Hole TO-247-4 N-Channel 1 Channel 900 V 29 A 110 mOhms - 8 V, + 22 V 4.3 V 56 nC - 55 C + 175 C 170 W Enhancement EliteSiC
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