SiC MOSFETs 100

Manufacturers

Mounting Style

  • D2PAK-3 (TO-263-3)

  • D2PAK-7

  • D3PAK-3

  • H-PSOF-8

  • H2PAK-7

  • HDSOP-16

  • HDSOP-22

  • HiP-247-3

  • HiP-247-4

  • HiP247-3

  • HSOF-8

  • HU3PAK-7

  • MO-229-8

  • PG-HDSOP-22-3

  • PG-LHSOF-4

  • PG-TO263-7

  • SMD/SMT

  • Through Hole

  • TO-247-3

  • TO-247-4

  • TO-263-7

  • TOLL-8

  • TOLT-16

Package / Case

  • D2PAK-3 (TO-263-3)

  • D2PAK-7

  • D3PAK-3

  • H-PSOF-8

  • H2PAK-7

  • HDSOP-16

  • HDSOP-22

  • HiP-247-3

  • HiP-247-4

  • HiP247-3

  • HSOF-8

  • HU3PAK-7

  • MO-229-8

  • PG-HDSOP-22-3

  • PG-LHSOF-4

  • PG-TO263-7

  • TO-247-3

  • TO-247-4

  • TO-263-7

  • TOLL-8

  • TOLT-16

Transistor Polarity

  • N-Channel

Number of Channels

  • 1 Channel

Vds - Drain-Source Breakdown Voltage

  • 1.2 kV

  • 1.7 kV

  • 3.3 kV

  • 400 V

  • 600 V

  • 650 V

  • 700 V

  • 750 V

  • 900 V

Id - Continuous Drain Current

  • 0,416666667

  • 100 A

  • 102 A

  • 103 A

  • 107 A

  • 111 A

  • 112 A

  • 113 A

  • 115 A

  • 116 A

  • 118 A

  • 129 A

  • 130 A

  • 131 A

  • 144 A

  • 153 A

  • 154 A

  • 158 A

  • 168 A

  • 17 A

  • 17.3 A

  • 18 A

  • 19.5 A

  • 196 A

  • 248 A

  • 26 A

  • 28 A

  • 288 A

  • 29 A

  • 30 A

  • 31 A

  • 32.8 A

  • 33 A

  • 34 A

  • 35 A

  • 36 A

  • 37 A

  • 37.4 A

  • 38 A

  • 39 A

  • 40 A

  • 41 A

  • 44 A

  • 48 A

  • 48.1 A

  • 49 A

  • 50 A

  • 51 A

  • 52 A

  • 53 A

  • 54 A

  • 55 A

  • 56 A

  • 60 A

  • 61 A

  • 62 A

  • 64 A

  • 66 A

  • 68 A

  • 69 A

  • 70 A

  • 71 A

  • 75 A

  • 79 A

  • 80 A

  • 81 A

  • 82 A

  • 90 A

  • 95 A

  • 97 A

Rds On - Drain-Source Resistance

  • 100 mOhms

  • 105 mOhms

  • 110 mOhms

  • 117 mOhms

  • 12 mOhms

  • 13.1 mOhms

  • 15 mOhms

  • 160 mOhms

  • 17 mOhms

  • 17.1 mOhms

  • 18 mOhms

  • 189 mOhms

  • 19 mOhms

  • 19.1 mOhms

  • 22 mOhms

  • 22.3 mOhms

  • 224 mOhms

  • 25 mOhms

  • 26 mOhms

  • 28 mOhms

  • 29 mOhms

  • 30 mOhms

  • 31 mOhms

  • 33 mOhms

  • 35 mOhms

  • 37 mOhms

  • 390 mOhms

  • 40 mOhms

  • 41 mOhms

  • 42 mOhms

  • 44 mOhms

  • 45 mOhms

  • 50 mOhms

  • 52 mOhms

  • 53 mOhms

  • 53.5 mOhms

  • 54 mOhms

  • 56 mOhms

  • 60 mOhms

  • 62 mOhms

  • 63 mOhms

  • 67 mOhms

  • 7 mOhms

  • 70 mOhms

  • 72 mOhms

  • 73 mOhms

  • 74 mOhms

  • 75 mOhms

  • 78 mOhms

  • 8.5 mOhms

  • 80 mOhms

  • 84 mOhms

  • 87 mOhms

Vgs - Gate-Source Voltage

  • - 10 V, + 22 V

  • - 10 V, + 25 V

  • - 4 V, + 15 V

  • - 5 V, + 20 V

  • - 7 V to + 23 V

  • - 7 V to 23 V

  • - 7 V, + 20 V

  • - 7V, + 23 V

  • - 8 V, + 19 V

  • - 8 V, + 22 V

Vgs th - Gate-Source Threshold Voltage

  • 1.8 V

  • 1.9 V

  • 2.8 V

  • 2.9 V

  • 2.97 V

  • 3 V

  • 3.6 V

  • 3.8 V

  • 4 V

  • 4.2 V

  • 4.3 V

  • 4.4 V

  • 4.5 V

  • 4.7 V

  • 5 V

  • 5.1 V

  • 5.6 V

  • 5.7 V

  • 6 V

Qg - Gate Charge

  • 105 nC

  • 106 nC

  • 108 nC

  • 11.7 nC

  • 112 nC

  • 113 nC

  • 121 nC

  • 124 nC

  • 13.4 nC

  • 137 nC

  • 14 nC

  • 148 nC

  • 150 nC

  • 151 nC

  • 157 nC

  • 162 nC

  • 169 nC

  • 179 nC

  • 188 nC

  • 19 nC

  • 196 nC

  • 200 nC

  • 203 nC

  • 207 nC

  • 21 nC

  • 215 nC

  • 22 nC

  • 220 nC

  • 232 nC

  • 293 nC

  • 30 nC

  • 31 nC

  • 32 nC

  • 33.8 nC

  • 34 nC

  • 37.8 nC

  • 370 nC

  • 39 nC

  • 41 nC

  • 42 nC

  • 42.5 nC

  • 43 nC

  • 45 nC

  • 46 nC

  • 51 nC

  • 55 nC

  • 56 nC

  • 62 nC

  • 63 nC

  • 64 nC

  • 71 nC

  • 73 nC

  • 79 nC

  • 81 nC

  • 82 nC

  • 88 nC

  • 89 nC

  • 93 nC

  • 94 nC

  • 95 nC

Minimum Operating Temperature

  • - 40 C

  • - 55 C

Maximum Operating Temperature

  • + 150 C

  • + 175 C

  • + 200 C

Pd - Power Dissipation

  • 1.249 kW

  • 107 W

  • 109 W

  • 111 W

  • 115 W

  • 119 W

  • 121 W

  • 130 W

  • 136 W

  • 143 W

  • 155 W

  • 170 W

  • 176 W

  • 178 W

  • 179 W

  • 182 W

  • 187 W

  • 200 W

  • 203 W

  • 205 W

  • 211 W

  • 218 W

  • 227 W

  • 234 W

  • 236 W

  • 237 W

  • 242 W

  • 244 W

  • 250 W

  • 254.2 W

  • 259 W

  • 263 W

  • 272 W

  • 288 W

  • 289 W

  • 291 W

  • 300 W

  • 304 W

  • 306 W

  • 312 W

  • 326 W

  • 329 W

  • 330 W

  • 341 W

  • 348 W

  • 352 W

  • 357 W

  • 360 W

  • 365 W

  • 371 W

  • 375 W

  • 381 W

  • 382 W

  • 385 W

  • 388 W

  • 390 W

  • 416 W

  • 440 W

  • 470 W

  • 477 W

  • 500 W

  • 503 W

  • 510 W

  • 517 W

  • 524 W

  • 535 W

  • 555 W

  • 556 W

  • 577 W

  • 651 W

  • 652 W

  • 681 W

  • 937 W

Channel Mode

  • Enhancement

Qualification

  • AEC-Q101

Tradename

  • CoolMOS

  • CoolSiC

  • EliteSiC

  • SiC FET

SiC MOSFETs - Results:100 / 100
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Image Product Name Price
Quantity Description Mfr Part# RoHS Mounting Style Package / Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Qualification Tradename
Image Product Name Price
Quantity Description Mfr Part# RoHS Mounting Style Package / Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Qualification Tradename
Infineon Technologies AIMCQ120R020M1TXTMA1
Infineon Technologies AIMCQ120R020M1TXTMA1
AIMCQ120R020M1TXTMA1
Infineon Technologies
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SiC MOSFETs SIC_DISCRETE AIMCQ120R020M1TXTMA1 SMD/SMT PG-HDSOP-22-3 N-Channel 1 Channel 116 A 25 mOhms 5.1 V 82 nC - 55 C + 175 C 577 W Enhancement CoolSiC
Infineon Technologies IMZC120R022M2HXKSA1
Infineon Technologies IMZC120R022M2HXKSA1
IMZC120R022M2HXKSA1
Infineon Technologies
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SiC MOSFETs CoolSiC MOSFET discrete 1200V, 22 mohm G2 IMZC120R022M2HXKSA1 Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 80 A 22 mOhms - 10 V, + 25 V 5.1 V 71 nC - 55 C + 175 C 329 W Enhancement CoolSiC
Infineon Technologies IMZC120R040M2HXKSA1
Infineon Technologies IMZC120R040M2HXKSA1
IMZC120R040M2HXKSA1
Infineon Technologies
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SiC MOSFETs CoolSiC MOSFET discrete 1200V, 40 mohm G2 IMZC120R040M2HXKSA1 Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 48 A 40 mOhms - 10 V, + 25 V 5.1 V 39 nC - 55 C + 175 C 218 W Enhancement CoolSiC
Infineon Technologies IMZC120R053M2HXKSA1
Infineon Technologies IMZC120R053M2HXKSA1
IMZC120R053M2HXKSA1
Infineon Technologies
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SiC MOSFETs CoolSiC MOSFET discrete 1200V, 53 mohm G2 IMZC120R053M2HXKSA1 Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 38 A 53 mOhms - 10 V, + 25 V 5.1 V 30 nC - 55 C + 175 C 182 W Enhancement CoolSiC
Infineon Technologies IMZC120R012M2HXKSA1
Infineon Technologies IMZC120R012M2HXKSA1
IMZC120R012M2HXKSA1
Infineon Technologies
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SiC MOSFETs CoolSiC MOSFET discrete 1200V, 12 mohm G2 IMZC120R012M2HXKSA1 Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 129 A 12 mOhms - 10 V, + 25 V 5.1 V 124 nC - 55 C + 175 C Enhancement CoolSiC
Infineon Technologies IMW65R010M2HXKSA1
Infineon Technologies IMW65R010M2HXKSA1
IMW65R010M2HXKSA1
Infineon Technologies
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SiC MOSFETs CoolSiC MOSFET 650 V, 10 mohm G2 IMW65R010M2HXKSA1 Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 130 A 13.1 mOhms - 10 V, + 25 V 5.6 V 112 nC - 55 C + 175 C 440 W Enhancement CoolSiC
Infineon Technologies IMZA65R010M2HXKSA1
Infineon Technologies IMZA65R010M2HXKSA1
IMZA65R010M2HXKSA1
Infineon Technologies
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SiC MOSFETs CoolSiC MOSFET 650 V, 10 mohm G2 IMZA65R010M2HXKSA1 Through Hole TO-247-4 N-Channel 1 Channel 650 V 144 A 13.1 mOhms - 10 V, + 25 V 5.6 V 112 nC - 55 C + 175 C 440 W Enhancement CoolSiC
Infineon Technologies AIMCQ120R040M1TXTMA1
Infineon Technologies AIMCQ120R040M1TXTMA1
AIMCQ120R040M1TXTMA1
Infineon Technologies
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SiC MOSFETs SIC_DISCRETE AIMCQ120R040M1TXTMA1 SMD/SMT PG-HDSOP-22-3 N-Channel 1 Channel 650 V 61 A 50 mOhms - 10 V, + 25 V 5.1 V 43 nC - 55 C + 175 C 341 W Enhancement CoolSiC
Infineon Technologies AIMCQ120R060M1TXTMA1
Infineon Technologies AIMCQ120R060M1TXTMA1
AIMCQ120R060M1TXTMA1
Infineon Technologies
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SiC MOSFETs Tailored to address OBC/DC-DC applications for 800V Automotive architecture AIMCQ120R060M1TXTMA1 SMD/SMT PG-HDSOP-22-3 N-Channel 1 Channel 1.2 kV 44 A 75 mOhms - 10 V, + 25 V 5.1 V 32 nC - 55 C + 175 C 259 W Enhancement CoolSiC
onsemi NTH4L032N065M3S
onsemi NTH4L032N065M3S
NTH4L032N065M3S
Onsemi
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SiC MOSFETs SIC MOS TO247-4L 32MOHM 650V M3S NTH4L032N065M3S Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 50 A 44 mOhms - 10 V, + 25 V 4 V 55 nC - 55 C + 175 C 187 W Enhancement
Infineon Technologies IMDQ65R007M2HXUMA1
Infineon Technologies IMDQ65R007M2HXUMA1
IMDQ65R007M2HXUMA1
Infineon Technologies
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SiC MOSFETs SILICON CARBIDE MOSFET IMDQ65R007M2HXUMA1 SMD/SMT HDSOP-22 N-Channel 1 Channel 650 V 196 A 8.5 mOhms - 8 V, + 22 V 5.6 V 179 nC - 55 C + 175 C 937 W Enhancement
STMicroelectronics SCT020HU120G3AG
STMicroelectronics SCT020HU120G3AG
SCT020HU120G3AG
STMicroelectronics
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SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 18.5 mOhm typ., 100 A in an HU3PAK package SCT020HU120G3AG SMD/SMT HU3PAK-7 N-Channel 1 Channel 650 V 100 A 28 mOhms 3 V 121 nC - 55 C 555 W Enhancement AEC-Q101
Infineon Technologies IMBG65R010M2HXTMA1
Infineon Technologies IMBG65R010M2HXTMA1
IMBG65R010M2HXTMA1
Infineon Technologies
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SiC MOSFETs CoolSiC MOSFET 650 V generation 2 in D2PAK 7pin package, 10/26/33/60 m? IMBG65R010M2HXTMA1 SMD/SMT PG-TO263-7 N-Channel 1 Channel 1.2 kV 158 A 13.1 mOhms - 10 V, + 22 V 5.6 V 112 nC - 55 C + 175 C 535 W Enhancement CoolSiC
Infineon Technologies IMW65R026M2HXKSA1
Infineon Technologies IMW65R026M2HXKSA1
IMW65R026M2HXKSA1
Infineon Technologies
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SiC MOSFETs CoolSiC MOSFET 650 V, 26 mohm G2 IMW65R026M2HXKSA1 Through Hole TO-247-3 N-Channel 1 Channel 650 V 64 A 33 mOhms 5.6 V 42 nC - 55 C + 175 C 227 W Enhancement CoolSiC
Infineon Technologies IMSQ120R053M2HHXUMA1
Infineon Technologies IMSQ120R053M2HHXUMA1
IMSQ120R053M2HHXUMA1
Infineon Technologies
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SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology IMSQ120R053M2HHXUMA1 650 V - 10 V, + 25 V
Infineon Technologies IMDQ65R010M2HXUMA1
Infineon Technologies IMDQ65R010M2HXUMA1
IMDQ65R010M2HXUMA1
Infineon Technologies
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SiC MOSFETs SILICON CARBIDE MOSFET IMDQ65R010M2HXUMA1 SMD/SMT HDSOP-22 N-Channel 1 Channel 1.2 kV 154 A 13.1 mOhms 5.6 V 113 nC - 55 C + 175 C 651 W Enhancement
Microchip Technology MSC025SMA120B4N
Microchip Technology MSC025SMA120B4N
MSC025SMA120B4N
Microchip Technology
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SiC MOSFETs MOSFET SIC 1200 V 25 mOhm TO-247-4 Notch MSC025SMA120B4N Through Hole TO-247-4 N-Channel 1 Channel 650 V 113 A 31 mOhms 5 V 232 nC - 55 C + 175 C 577 W Enhancement
Microchip Technology MSC035SMA070B4N
Microchip Technology MSC035SMA070B4N
MSC035SMA070B4N
Microchip Technology
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SiC MOSFETs MOSFET SIC 700 V 35 mOhm TO-247-4 Notch MSC035SMA070B4N Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 75 A 44 mOhms 5 V 93 nC - 55 C + 175 C 304 W Enhancement
Infineon Technologies IMZC120R078M2HXKSA1
Infineon Technologies IMZC120R078M2HXKSA1
IMZC120R078M2HXKSA1
Infineon Technologies
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SiC MOSFETs CoolSiC MOSFET discrete 1200V, 78 mohm G2 IMZC120R078M2HXKSA1 Through Hole TO-247-4 N-Channel 1 Channel 700 V 28 A 78 mOhms 5.1 V 21 nC - 55 C + 175 C 143 W Enhancement CoolSiC
Microchip Technology MSC080SMA330B4N
Microchip Technology MSC080SMA330B4N
MSC080SMA330B4N
Microchip Technology
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SiC MOSFETs MOSFET SIC 3300V 80 mOhm TO-247-4L-Notch MSC080SMA330B4N Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 41 A 105 mOhms - 10 V, + 25 V 2.97 V 55 nC - 55 C + 150 C 381 W Enhancement
Infineon Technologies IMZC120R017M2HXKSA1
Infineon Technologies IMZC120R017M2HXKSA1
IMZC120R017M2HXKSA1
Infineon Technologies
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SiC MOSFETs CoolSiC MOSFET discrete 1200V, 17 mohm G2 IMZC120R017M2HXKSA1 Through Hole TO-247-4 N-Channel 1 Channel 3.3 kV 97 A 17 mOhms 5.1 V 89 nC - 55 C + 175 C 382 W Enhancement CoolSiC
Infineon Technologies IMZC120R026M2HXKSA1
Infineon Technologies IMZC120R026M2HXKSA1
IMZC120R026M2HXKSA1
Infineon Technologies
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SiC MOSFETs CoolSiC MOSFET discrete 1200V, 26 mohm G2 IMZC120R026M2HXKSA1 Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 69 A 25 mOhms - 10 V, + 25 V 5.1 V 124 nC - 55 C + 175 C 289 W Enhancement CoolSiC
Microchip Technology MSC040SMA120B4N
Microchip Technology MSC040SMA120B4N
MSC040SMA120B4N
Microchip Technology
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SiC MOSFETs MOSFET SIC 1200 V 40 mOhm TO-247-4 Notch MSC040SMA120B4N Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 71 A 50 mOhms - 10 V, + 25 V 5 V 137 nC - 55 C + 175 C 371 W Enhancement
STMicroelectronics SCT016H120G3AG
STMicroelectronics SCT016H120G3AG
SCT016H120G3AG
STMicroelectronics
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SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mOhm typ., 112 A in an H2PAK-7 package SCT016H120G3AG SMD/SMT H2PAK-7 N-Channel 1 Channel 1.2 kV 112 A 22 mOhms 3 V 150 nC - 55 C + 175 C 652 W Enhancement AEC-Q101
Infineon Technologies IMT65R010M2HXUMA1
Infineon Technologies IMT65R010M2HXUMA1
IMT65R010M2HXUMA1
Infineon Technologies
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SiC MOSFETs SILICON CARBIDE MOSFET IMT65R010M2HXUMA1 SMD/SMT HSOF-8 N-Channel 1 Channel 1.2 kV 168 A 13.1 mOhms - 10 V, + 22 V 4.5 V 113 nC - 55 C + 175 C 681 W Enhancement CoolSiC
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