GaN FETs 80

Manufacturers

Mounting Style

  • Flanged

  • Screw Mount

  • SMD/SMT

  • Through Hole

Package / Case

  • 440166

  • 440193

  • 440199

  • 440201

  • 440226

  • 8x8 PQFN

  • DFN-12

  • DFN-6

  • Die

  • GaNpx

  • H-37248C-4

  • H-87265J-2

  • NI-1230-4

  • NI-200

  • NI-360

  • NI-360H-2SB

  • NI-50CW

  • NI-650

  • NI-780

  • PDFN-6

  • PDFN-8

  • PG-HSOF-8

  • PG-LSON-8

  • PG-TSON-4

  • PG-TSON-6

  • PG-TSON-8

  • PG-VSON-4

  • PG-VSON-6

  • PQFN-3

  • PQFN-8

  • QFN-16

  • QFN-20

  • QFN-24

  • RF-565

  • TO-247-3

  • WLCSP-16

Transistor Polarity

  • Dual N-Channel

  • N-Channel

  • P-Channel

Number of Channels

  • 1 Channel

  • 2 Channel

  • 8 Channel

Vds - Drain-Source Breakdown Voltage

  • 100 V

  • 120 V

  • 125 V

  • 150 V

  • 28 V

  • 32 V

  • 40 V

  • 48 V

  • 50 V

  • 60 V

  • 65 V

  • 650 V

  • 700 V

  • 80 V

  • 84 V

Id - Continuous Drain Current

  • 1.5 A

  • 1.7 A

  • 1.78 A

  • 1.8 A

  • 11 A

  • 12 A

  • 12.2 A

  • 13 A

  • 14 A

  • 15 A

  • 15.2 A

  • 18 A

  • 19 A

  • 20 A

  • 21 A

  • 23 A

  • 24 A

  • 25 A

  • 28 A

  • 3 A

  • 3.6 A

  • 350 mA

  • 36 A

  • 38 A

  • 4 A

  • 4 mA

  • 4.1 A

  • 4.2 A

  • 4.6 A

  • 40 A

  • 400 mA

  • 49 A

  • 5.4 A

  • 50 mA

  • 6 A

  • 60 A

  • 610 mA

  • 650 mA

  • 7 A

  • 7.2 A

  • 7.5 A

  • 70 A

  • 700 mA

  • 71 A

  • 76 A

  • 8.1 A

  • 8.7 A

  • 8.8 A

  • 80 mA

  • 800 mA

  • 86 A

  • 9.2 A

  • 9.5 A

  • 950 mA

  • 99 A

Rds On - Drain-Source Resistance

  • 1 Ohms

  • 1.9 mOhms

  • 100 mOhms

  • 11 mOhms

  • 130 mOhms

  • 138 mOhms

  • 140 mOhms

  • 150 mOhms

  • 170 mOhms

  • 180 mOhms

  • 2.3 Ohms

  • 2.5 mOhms

  • 200 mOhms

  • 235 mOhms

  • 240 mOhms

  • 260 mOhms

  • 3.3 mOhms

  • 3.7 mOhms

  • 30 mOhms

  • 32 mOhms

  • 330 mOhms

  • 38 mOhms

  • 42 mnOhms

  • 440 mOhms

  • 455 mOhms

  • 500 mOhms

  • 560 mOhms

  • 60 mOhms

  • 7 mOhms

  • 70 mOhms

  • 72 mOhms

  • 8 mOhms

  • 90 mOhms

  • 97 mOhms

Vgs - Gate-Source Voltage

  • + 20 V

  • - 10 V

  • - 10 V, + 7 V

  • - 10 V, 7 V

  • - 18 V, + 18 V

  • - 2.8 V

  • - 20 V, + 20 V

  • - 20 V, 20 V

  • - 7 V, + 2 V

  • - 8 V

  • 6.5 V

  • 8 V

Vgs th - Gate-Source Threshold Voltage

  • - 1.8 V

  • - 2.5 V

  • - 2.7 V

  • - 2.9 V

  • - 3 V

  • - 3.8 V

  • 1.1 V

  • 1.2 V

  • 1.5 V

  • 1.6 V

  • 2.3 V

  • 2.4 V

  • 2.6 V

  • 2.8 V

  • 2.9 V

  • 4 V

  • 4.8 V

Qg - Gate Charge

  • 1.26 nC

  • 1.6 nC

  • 1.8 nC

  • 10.1 nC

  • 11 nC

  • 12 nC

  • 13 nC

  • 14.2 nC

  • 15 nC

  • 2 nC

  • 2.2 nC

  • 2.4 nC

  • 2.6 nC

  • 2.7 nC

  • 3.3 nC

  • 3.4 nC

  • 4.2 nC

  • 4.7 nC

  • 4.9 nC

  • 6.1 nC

  • 6.7 nC

  • 7.7 nC

  • 8 nC

  • 800 pC

  • 9 nC

Minimum Operating Temperature

  • - 40 C

  • - 55 C

  • - 65 C

Maximum Operating Temperature

  • + 125 C

  • + 150 C

  • + 175 C

  • + 200 C

  • + 225 C

  • + 85 C

Pd - Power Dissipation

  • 107 W

  • 12.5 W

  • 127 W

  • 13.2 W

  • 13.5 W

  • 13.8 W

  • 144 W

  • 15 W

  • 150 W

  • 166 W

  • 167 W

  • 21.6 W

  • 23 W

  • 236 W

  • 28 W

  • 33 W

  • 34 W

  • 34.5 W

  • 345 W

  • 370 W

  • 400 W

  • 42 W

  • 44 W

  • 445 W

  • 45 W

  • 46 W

  • 47 W

  • 5 W

  • 50.4 W

  • 51 W

  • 52 W

  • 56 W

  • 68 W

  • 685 W

  • 758 W

  • 8.9 W

  • 91 W

  • 96 W

Channel Mode

  • Enhancement

Qualification

  • AEC-Q101

Tradename

  • CoolGaN

  • GaNpx

  • SuperGaN

GaN FETs - Results:80 / 80
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Image Product Name Price
Quantity Description Mfr Part# RoHS Mounting Style Package / Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Qualification Tradename
Image Product Name Price
Quantity Description Mfr Part# RoHS Mounting Style Package / Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Qualification Tradename
Renesas Electronics TP65H480G4JSG-TR
Renesas Electronics TP65H480G4JSG-TR
TP65H480G4JSG-TR
Renesas Electronics
1 +
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Unit: 0
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Favorite
GaN FETs 650V, 480mOhm TP65H480G4JSG-TR SMD/SMT PQFN-3 N-Channel 1 Channel 650 V 3.6 A 560 mOhms - 18 V, + 18 V 2.8 V 9 nC - 55 C + 150 C 13.2 W Enhancement SuperGaN
Renesas Electronics TP65H015G5WS
Renesas Electronics TP65H015G5WS
TP65H015G5WS
Renesas Electronics
1 +
Contact
Unit: 0
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GaN FETs GAN FET 650V 95A TO2 47 TP65H015G5WS Through Hole TO-247-3 N-Channel 1 Channel 650 V - 20 V, + 20 V 4 V - 55 C + 150 C Enhancement
Renesas Electronics TP65H150G4LSG
Renesas Electronics TP65H150G4LSG
TP65H150G4LSG
Renesas Electronics
1 +
Contact
Unit: 0
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GaN FETs GAN FET 650V 13A TO220 TP65H150G4LSG SMD/SMT 8x8 PQFN N-Channel 1 Channel 650 V 13 A 180 mOhms - 20 V, + 20 V 4.8 V 8 nC - 55 C + 150 C 52 W Enhancement SuperGaN
Qorvo TGF3021-SM
Qorvo TGF3021-SM
TGF3021-SM
Qorvo
1 +
Contact
Unit: 0
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GaN FETs 0.03-4.0 GHz, 30W, 32V GaN RF Tr TGF3021-SM SMD/SMT QFN-20 32 V 1.8 A
MACOM CG2H40010P
MACOM CG2H40010P
CG2H40010P
MACOM
1 +
Contact
Unit: 0
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GaN FETs 10W, 6.0GHz, GaN HEMT G28V4 (CG2H40010P) CG2H40010P
Qorvo TGF2954
Qorvo TGF2954
TGF2954
Qorvo
1 +
Contact
Unit: 0
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Favorite
GaN FETs DC-12GHz 27W 32V GaN P3dB @ 3GHz 44.5dBm TGF2954 SMD/SMT Die N-Channel 32 V 1.7 A - 65 C + 150 C 34.5 W
Qorvo QPD0060
Qorvo QPD0060
QPD0060
Qorvo
1 +
Contact
Unit: 0
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GaN FETs DC-3.6GHz GaN 90W 48V QPD0060 SMD/SMT DFN-6 48 V - 40 C
MACOM NPTB00025B
MACOM NPTB00025B
NPTB00025B
MACOM
1 +
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Unit: 0
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GaN FETs DC-4.0GHz 25W Gain 13.5dB GaN HEMT NPTB00025B
MACOM NPT1012B
MACOM NPT1012B
NPT1012B
MACOM
1 +
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Unit: 0
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GaN FETs DC-4.0GHz P1dB 43dBm Gain 13dB GaN NPT1012B Screw Mount N-Channel 100 V 4 mA 440 mOhms - 1.8 V + 200 C 44 W
Qorvo TGF2933
Qorvo TGF2933
TGF2933
Qorvo
1 +
Contact
Unit: 0
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GaN FETs DC-25GHz 7Watt NF 1.3dB GaN TGF2933 SMD/SMT Die N-Channel 80 mA - 40 C + 85 C 8.9 W
Infineon Technologies IGB110S101XTMA1
Infineon Technologies IGB110S101XTMA1
IGB110S101XTMA1
Infineon Technologies
1 +
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GaN FETs MV GAN DISCRETES IGB110S101XTMA1 SMD/SMT PG-VSON-4 N-Channel 1 Channel 100 V 23 A 2.9 V 3.4 nC - 40 C + 150 C 15 W Enhancement CoolGaN
Infineon Technologies IGC037S12S1XTMA1
Infineon Technologies IGC037S12S1XTMA1
IGC037S12S1XTMA1
Infineon Technologies
1 +
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GaN FETs CoolGaN Transistor 120 V G3 in PQFN 3x5, 2.7 mohm IGC037S12S1XTMA1 SMD/SMT PG-TSON-6 1 Channel 120 V 71 A 3.7 mOhms 6.5 V 2.9 V 13 nC - 40 C + 150 C 45 W Enhancement CoolGaN
Infineon Technologies IGLD65R055D2AUMA1
Infineon Technologies IGLD65R055D2AUMA1
IGLD65R055D2AUMA1
Infineon Technologies
1 +
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Unit: 0
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GaN FETs CoolGaN Transistor 650 V G5 IGLD65R055D2AUMA1 SMD/SMT PG-LSON-8 N-Channel 1 Channel 650 V 20 A 70 mOhms - 10 V 1.2 V 4.7 nC - 55 C + 150 C 91 W Enhancement CoolGaN
Infineon Technologies IGLD65R080D2AUMA1
Infineon Technologies IGLD65R080D2AUMA1
IGLD65R080D2AUMA1
Infineon Technologies
1 +
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Unit: 0
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GaN FETs CoolGaN Transistor 650 V G5 IGLD65R080D2AUMA1 SMD/SMT PG-LSON-8 N-Channel 1 Channel 650 V 18 A 100 mOhms - 10 V 1.2 V 3.3 nC - 55 C + 150 C 68 W Enhancement CoolGaN
Infineon Technologies IGLD65R110D2AUMA1
Infineon Technologies IGLD65R110D2AUMA1
IGLD65R110D2AUMA1
Infineon Technologies
1 +
Contact
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GaN FETs CoolGaN Transistor 650 V G5 IGLD65R110D2AUMA1 SMD/SMT PG-LSON-8 N-Channel 1 Channel 650 V 20 A 140 mOhms - 10 V 1.2 V 2.4 nC - 55 C + 150 C 51 W Enhancement CoolGaN
Infineon Technologies IGLD65R140D2AUMA1
Infineon Technologies IGLD65R140D2AUMA1
IGLD65R140D2AUMA1
Infineon Technologies
1 +
Contact
Unit: 0
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GaN FETs CoolGaN Transistor 650 V G5 IGLD65R140D2AUMA1 SMD/SMT PG-LSON-8 N-Channel 1 Channel 650 V 12 A 170 mOhms - 10 V 1.2 V 1.8 nC - 55 C + 150 C 42 W Enhancement CoolGaN
Infineon Technologies IGLR65R140D2XUMA1
Infineon Technologies IGLR65R140D2XUMA1
IGLR65R140D2XUMA1
Infineon Technologies
1 +
Contact
Unit: 0
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GaN FETs HV GAN DISCRETES IGLR65R140D2XUMA1 SMD/SMT PG-TSON-8 N-Channel 1 Channel 650 V 13 A 170 mOhms - 10 V 1.6 V 2.6 nC - 55 C + 150 C 46 W Enhancement
Infineon Technologies IGLR65R200D2XUMA1
Infineon Technologies IGLR65R200D2XUMA1
IGLR65R200D2XUMA1
Infineon Technologies
1 +
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Unit: 0
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GaN FETs HV GAN DISCRETES IGLR65R200D2XUMA1 SMD/SMT PG-TSON-8 N-Channel 1 Channel 650 V 9.2 A 240 mOhms - 10 V 1.6 V 1.8 nC - 55 C + 150 C 33 W Enhancement
Infineon Technologies IGT65R025D2ATMA1
Infineon Technologies IGT65R025D2ATMA1
IGT65R025D2ATMA1
Infineon Technologies
1 +
Contact
Unit: 0
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GaN FETs CoolGaN Transistor 650 V G5 IGT65R025D2ATMA1 SMD/SMT PG-HSOF-8 N-Channel 1 Channel 650 V 70 A 30 mOhms - 10 V 1.6 V 11 nC - 55 C + 150 C 236 W Enhancement CoolGaN
Infineon Technologies IGT65R035D2ATMA1
Infineon Technologies IGT65R035D2ATMA1
IGT65R035D2ATMA1
Infineon Technologies
1 +
Contact
Unit: 0
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GaN FETs CoolGaN Transistor 650 V G5 IGT65R035D2ATMA1 SMD/SMT PG-HSOF-8 P-Channel 1 Channel 650 V 49 A 42 mnOhms - 10 V 1.6 V 7.7 nC - 55 C + 150 C 167 W Enhancement CoolGaN
MACOM CGH35240F
MACOM CGH35240F
CGH35240F
MACOM
1 +
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Unit: 0
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GaN FETs GaN HEMT 3.1-3.5GHz, 240 Watt CGH35240F Screw Mount 440201 N-Channel 120 V 24 A - 3 V - 40 C + 150 C
NXP Semiconductors A3G26D055NT4
NXP Semiconductors A3G26D055NT4
A3G26D055NT4
NXP
1 +
Contact
Unit: 0
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GaN FETs Airfast RF Power GaN Amplifier, 100-2690 MHz, 8 W Avg., 48 V A3G26D055NT4 SMD/SMT DFN-6 2 Channel 125 V - 2.7 V - 55 C + 150 C
MACOM MAGX-011086
MACOM MAGX-011086
MAGX-011086
MACOM
1 +
Contact
Unit: 0
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GaN FETs M/A-COM Technology Solutions MAGX-011086 SMD/SMT QFN-24 N-Channel 28 V 50 mA - 2.5 V - 40 C + 85 C
MACOM CGHV35150F
MACOM CGHV35150F
CGHV35150F
MACOM
1 +
Contact
Unit: 0
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GaN FETs GaN HEMT 2.9-3.5GHz, 150 Watt CGHV35150F Screw Mount 440193 N-Channel 150 V 12 A - 3 V - 40 C + 150 C
Qorvo QPD1010
Qorvo QPD1010
QPD1010
Qorvo
1 +
Contact
Unit: 0
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GaN FETs DC-4GHz 10W 28-50V SSG 25dB PAE 70% GaN QPD1010 SMD/SMT QFN-16 N-Channel 50 V 400 mA - 40 C + 85 C 13.5 W
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